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SUP/SUB65P04-15
Vishay Siliconix
THERMAL RATINGS
75
1000
60
100
Limited
by R DS(on)*
10 μs
100 μs
45
30
10
1 ms
10 ms
100 ms
15
0
1
0.1
T C = 25 °C
Single Pulse
DC
0
25
50
75
100
125
150
175
0.1
1 10 100
V DS - Drain-to-Source Voltage (V)
t 2
t 2
2
1
0.1
0.01
T C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area
Notes:
P DM
t 1
t 1
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71174 .
Document Number: 71174
S11-2308-Rev. B, 21-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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